Publication:
Dielectric and Raman spectroscopy of TlSe thin films

dc.contributor.authorÖzel, Ayşen E.
dc.contributor.authorDeğer, Deniz
dc.contributor.authorÇelik, Sefa
dc.contributor.authorŞahin, Yakut
dc.contributor.authorKarabak, Binnur
dc.contributor.authorUlutaş, Hulusi Kemal
dc.contributor.authorAKYÜZ, SEVİM
dc.contributor.authorID110745tr_TR
dc.contributor.authorID110147tr_TR
dc.contributor.authorID10127tr_TR
dc.contributor.authorID125287tr_TR
dc.date.accessioned2018-07-20T08:19:47Z
dc.date.available2018-07-20T08:19:47Z
dc.date.issued2017-12-15
dc.description.abstractIn this report, the results of Dielectric and Raman spectroscopy of TlSe thin films are presented. The films were deposited in different thicknesses ranging from 290 angstrom to 3200 angstrom by thermal evaporation method. The relative permittivity (dielectric constant epsilon(r)') and dielectric loss (epsilon(r)'') of TlSe thin films were calculated by measuring capacitance (C) and dielectric loss factor (tan delta) in the frequencies ranging between 10(-2) Hz-10(7) Hz and in the temperature ranging between 173 K and 433 K. In the given intervals, both the dielectric constant and the dielectric loss of TlSe thin films decrease with increasing frequency, but increase with increasing temperature. This behavior can be explained as multicomponent polarization in the structure. The ac conductivity obeys the omega(s) law when s (s < 1). The dielectric constant of TlSe thin films is determined from Dielectric and Raman spectroscopy measurements. The results obtained by two different methods are in agreement with each other. (C) 2017 Elsevier B.V. All rights reserved.tr_TR
dc.identifier.issn0921-4526
dc.identifier.other1873-2135
dc.identifier.scopus2-s2.0-85031812268
dc.identifier.scopus2-s2.0-85031812268en
dc.identifier.urihttps://doi.org/10.1016/j.physb.2017.10.043
dc.identifier.urihttps://hdl.handle.net/11413/2215
dc.identifier.wos415632300013
dc.identifier.wos415632300013en
dc.language.isoen_UStr_TR
dc.publisherElsevier Science Bv, Po Box 211, 1000 AE Amsterdam, Netherlandstr_TR
dc.relationPhysica B-Condensed Mattertr_TR
dc.subjectRaman Spectroscopytr_TR
dc.subjectDielectric Spectroscopytr_TR
dc.subjectTlSetr_TR
dc.subjectDielectric Propertiestr_TR
dc.subjectDielectric Constanttr_TR
dc.subjectAC Conductivitytr_TR
dc.subjectConduction Mechanismstr_TR
dc.subjectElectric Modulustr_TR
dc.subjectAc Conductivitytr_TR
dc.subjectChain Tlsetr_TR
dc.subjectSystemtr_TR
dc.subjectRelaxationtr_TR
dc.subjectAlloystr_TR
dc.subjectAgtr_TR
dc.subjectImpedancetr_TR
dc.subjectTlinse2tr_TR
dc.titleDielectric and Raman spectroscopy of TlSe thin filmstr_TR
dc.typeArticle
dspace.entity.typePublication
local.indexed.atscopus
local.indexed.atwos
relation.isAuthorOfPublication70600e97-ae14-4ca5-b357-0fd647a25331
relation.isAuthorOfPublication.latestForDiscovery70600e97-ae14-4ca5-b357-0fd647a25331

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