Publication:
Spatio-Temporal Patterns In A Semiconductor-Gas-Discharge System: Numerical Solutions And Stability Analysis In 3D Geometry

dc.contributor.authorRafatov, İsmail
dc.date.accessioned2014-08-13T11:21:59Z
dc.date.available2014-08-13T11:21:59Z
dc.date.issued2006-07
dc.description.abstractWe investigated the spatio-temporal patterns formation in the semiconductor-gas-discharge sys-tem consisting of a short gas-discharge layer sandwiced with a semiconductor layer between planar electrodes to which a de voltage is applied, in three spatial dimensions. We define the model, identify its independent dimensionless parameters, and then present the results of the full time-dependent numerical solutions of the model as well as well of a linear stability analysis of the stationary state. Nuremical solutions and the results of the stability analysis agree well. Numerical results Show that at parameter regime we investigated either purely Hopf bifurcation or Turing-Hopf bifurcation takes place.en
dc.identifier.issn1303-2739
dc.identifier.urihttp://hdl.handle.net/11413/377
dc.language.isoen_UStr_TR
dc.publisherİstanbul Kültür Üniversitesi Yayınlarıtr_TR
dc.subjectPattern Formationtr_TR
dc.subjectStability Analysistr_TR
dc.subjectBarrier Dischargetr_TR
dc.subjectModelingtr_TR
dc.subjectNumerical Solutiontr_TR
dc.subjectModel Oluşturmatr_TR
dc.subjectKararlılık Analizitr_TR
dc.subjectBariyer Deşarjtr_TR
dc.subjectModellemetr_TR
dc.subjectSayısal Çözümtr_TR
dc.titleSpatio-Temporal Patterns In A Semiconductor-Gas-Discharge System: Numerical Solutions And Stability Analysis In 3D Geometrytr_TR
dc.typeArticle
dspace.entity.typePublication

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