Spatio-Temporal Patterns In A Semiconductor-Gas-Discharge System: Numerical Solutions And Stability Analysis In 3D Geometry

Rafatov, İsmail

Publication:
Spatio-Temporal Patterns In A Semiconductor-Gas-Discharge System: Numerical Solutions And Stability Analysis In 3D Geometry

dc.contributor.author	Rafatov, İsmail
dc.date.accessioned	2014-08-13T11:21:59Z
dc.date.available	2014-08-13T11:21:59Z
dc.date.issued	2006-07
dc.description.abstract	We investigated the spatio-temporal patterns formation in the semiconductor-gas-discharge sys-tem consisting of a short gas-discharge layer sandwiced with a semiconductor layer between planar electrodes to which a de voltage is applied, in three spatial dimensions. We define the model, identify its independent dimensionless parameters, and then present the results of the full time-dependent numerical solutions of the model as well as well of a linear stability analysis of the stationary state. Nuremical solutions and the results of the stability analysis agree well. Numerical results Show that at parameter regime we investigated either purely Hopf bifurcation or Turing-Hopf bifurcation takes place.	en
dc.identifier.issn	1303-2739
dc.identifier.uri	http://hdl.handle.net/11413/377
dc.language.iso	en_US	tr_TR
dc.publisher	İstanbul Kültür Üniversitesi Yayınları	tr_TR
dc.subject	Pattern Formation	tr_TR
dc.subject	Stability Analysis	tr_TR
dc.subject	Barrier Discharge	tr_TR
dc.subject	Modeling	tr_TR
dc.subject	Numerical Solution	tr_TR
dc.subject	Model Oluşturma	tr_TR
dc.subject	Kararlılık Analizi	tr_TR
dc.subject	Bariyer Deşarj	tr_TR
dc.subject	Modelleme	tr_TR
dc.subject	Sayısal Çözüm	tr_TR
dc.title	Spatio-Temporal Patterns In A Semiconductor-Gas-Discharge System: Numerical Solutions And Stability Analysis In 3D Geometry	tr_TR
dc.type	Article
dspace.entity.type	Publication