Large single-crystal growth and characterization of the narrow-gap semiconductor TlBiS2

Publication:
Large single-crystal growth and characterization of the narrow-gap semiconductor TlBiS2

dc.contributor	Fen Edebiyat Fakültesi / Faculty of Letters and Sciences Fizik / Physics	tr_TR
dc.contributor.author	Özer, Mehmet
dc.contributor.author	Paraskevopoulos, K. M.
dc.contributor.author	Anagnostopoulos, A. N.
dc.contributor.author	Kokou, S.
dc.contributor.author	Polychroniadis, E. K.
dc.contributor.authorID	2509	tr_TR
dc.date.accessioned	2018-12-27T14:44:09Z
dc.date.available	2018-12-27T14:44:09Z
dc.date.issued	1996
dc.description.abstract	TIBiS2 is a narrow-gap semiconductor with a layered structure, isoelectronically analogous to PbS. Large single crystals were grown by the Bridgman - Stockbarger method from the melt and characterized by x-ray diffraction. The lattice parameters were determined and the discrepancy between those already reported was removed. From IR reflectivity measurements in the plasma region, the number of carriers was calculated. Also a strong anisotropy of the electrical conductivity was detected and the narrow-gap character of the material was supported by electrical measurements in the range of 10 - 300 K.	tr_TR
dc.identifier.issn	0268-1242
dc.identifier.uri	https://doi.org/10.1088/0268-1242/11/10/009
dc.identifier.uri	https://hdl.handle.net/11413/4189
dc.language.iso	en_US	tr_TR
dc.relation	Semiconductor Science and Technology	tr_TR
dc.title	Large single-crystal growth and characterization of the narrow-gap semiconductor TlBiS2	tr_TR
dc.type	Article	tr_TR
dspace.entity.type	Publication