Chaotic Behavior of the Forward I-V Characteristic of the Al/a-SiC:H/c-Si(n) Heterojunction

Özer, Mehmet; Hanias, M. P.; Magafas, L.; Stavrinides, S. G.; Papadopoulou, P.

Publication:
Chaotic Behavior of the Forward I-V Characteristic of the Al/a-SiC:H/c-Si(n) Heterojunction

dc.contributor.author	Özer, Mehmet
dc.contributor.author	Hanias, M. P.
dc.contributor.author	Magafas, L.
dc.contributor.author	Stavrinides, S. G.
dc.contributor.author	Papadopoulou, P.
dc.contributor.authorID	2509	tr_TR
dc.date.accessioned	2018-07-30T07:12:55Z
dc.date.available	2018-07-30T07:12:55Z
dc.date.issued	2013
dc.description.abstract	In this paper the electrical behavior of the Al/a-SiC:H/c-Si(n) heterojunction for different values of density of gap states (N) in a-SiC:H,is simulated and studied. It is observed that as the density of gap states in a-SiC: H increases from 10(-15) cm(-3) to 10(-18) cm(-3) the I-V characteristics, in the forward bias, present a deviation from the typical I-V of a diode, which is enhanced with the increase of N. For N D 10(-18) cm(-3) the forward I-V characteristic shows strong chaotic vibration that is attributed to the tunneling effect taking place in the junction a-SiC:H/c-Si(n) in the forward bias. With the method of delays correlation and minimum embedding dimension are calculated, while the influence of gap states in strengthening chaos is studied.	tr_TR
dc.identifier.isbn	978-3-642-33914-1
dc.identifier.uri	https://doi.org/10.1007/978-3-642-33914-1_66
dc.identifier.uri	https://hdl.handle.net/11413/2398
dc.language.iso	en_US	tr_TR
dc.publisher	Springer-Verlag Berlin, Heidelberger Platz 3, D-14197 Berlin, Germany	tr_TR
dc.relation	Chaos and Complex Systems	tr_TR
dc.subject	Physics, Mathematical	tr_TR
dc.title	Chaotic Behavior of the Forward I-V Characteristic of the Al/a-SiC:H/c-Si(n) Heterojunction	tr_TR
dc.type	Article	tr_TR
dspace.entity.type	Publication