Publication: Single crystal growth and characterization of (TlBiSe2)1_ x-(TlBiS2)x narrow gap mixed crystals
dc.contributor | Fen Edebiyat Fakültesi / Faculty of Letters and Sciences Fizik / Physics | tr_TR |
dc.contributor.author | Özer, Mehmet | |
dc.contributor.author | Paraskevopoulos, K. M. | |
dc.contributor.author | Anagnostopoulos, A. N. | |
dc.contributor.author | Kokkou, S. | |
dc.contributor.author | Polychroniadis, E. K. | |
dc.contributor.authorID | 2509 | tr_TR |
dc.date.accessioned | 2018-12-27T13:54:39Z | |
dc.date.available | 2018-12-27T13:54:39Z | |
dc.date.issued | 1998 | |
dc.description.abstract | Large single crystals of the family of layered compounds - were grown by the Bridgman-Stockbarger method for x = 0.0, 0.25, 0.50, 0.75 and 1.0. The structures of the as-grown single crystals were determined by x-ray diffraction and the lattice parameters and unit cell volumes were obtained. Infrared reflectivity measurements were also performed in the range 600-. From the analysis, the parameters , and were calculated. The electrical resistivities and (parallel and perpendicular to the layers, respectively) were measured as a function of temperature. From the measurements the plot of the Debye temperature versus x was calculated. An attempt was also made to correlate these physical properties with the compositional parameter x. | tr_TR |
dc.identifier | 13 | tr_TR |
dc.identifier | 13 | tr_TR |
dc.identifier | 13 | tr_TR |
dc.identifier.issn | 0268-1242 | |
dc.identifier.uri | https://doi.org/10.1088/0268-1242/13/1/013 | |
dc.identifier.uri | https://hdl.handle.net/11413/4186 | |
dc.language.iso | en_US | tr_TR |
dc.relation | Semiconductor Science and Technology | tr_TR |
dc.title | Single crystal growth and characterization of (TlBiSe2)1_ x-(TlBiS2)x narrow gap mixed crystals | tr_TR |
dc.type | Article | tr_TR |
dspace.entity.type | Publication |
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