Chrissaris, K.Vinga, E. S.Özer, MehmetParaskevopoullos, K. M.Polychroniadis, E. K.2018-07-312018-07-312004-040232-1300https://doi.org/10.1002/crat.200310189https://hdl.handle.net/11413/2446TlBiTe2 and TlBiSe2 -that are ternary analogs of the IV-VI semiconductors-, although they crystallize in the same space group R (3) over barm (D-3d(5)), exhibit different behaviour during heating. The observed phase transformation depends on Se content (x) in the system TIBi(Te1-xSex)(2) and the transformation disappears by increasing Se content after a certain value (x=0.25). This dependence is examined through the analysis of the DSC non-isothermal measurements and an attempt for the explanation of the observed behaviour is undertaken through the consideration of off - center atoms. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen-USphase transformationoff-centerDSCnarrow gapchalcogenidesplasmaIctac Kinetics ProjectComputational AspectsTlbite2GrowthArticle221266000006221266000006