Özel, Ayşen E.Değer, DenizÇelik, SefaŞahin, YakutKarabak, BinnurUlutaş, Hulusi KemalAKYÜZ, SEVİM2018-07-202018-07-202017-12-150921-45261873-2135https://doi.org/10.1016/j.physb.2017.10.043https://hdl.handle.net/11413/2215In this report, the results of Dielectric and Raman spectroscopy of TlSe thin films are presented. The films were deposited in different thicknesses ranging from 290 angstrom to 3200 angstrom by thermal evaporation method. The relative permittivity (dielectric constant epsilon(r)') and dielectric loss (epsilon(r)'') of TlSe thin films were calculated by measuring capacitance (C) and dielectric loss factor (tan delta) in the frequencies ranging between 10(-2) Hz-10(7) Hz and in the temperature ranging between 173 K and 433 K. In the given intervals, both the dielectric constant and the dielectric loss of TlSe thin films decrease with increasing frequency, but increase with increasing temperature. This behavior can be explained as multicomponent polarization in the structure. The ac conductivity obeys the omega(s) law when s (s < 1). The dielectric constant of TlSe thin films is determined from Dielectric and Raman spectroscopy measurements. The results obtained by two different methods are in agreement with each other. (C) 2017 Elsevier B.V. All rights reserved.en-USRaman SpectroscopyDielectric SpectroscopyTlSeDielectric PropertiesDielectric ConstantAC ConductivityConduction MechanismsElectric ModulusAc ConductivityChain TlseSystemRelaxationAlloysAgImpedanceTlinse2Article4156323000134156323000132-s2.0-850318122682-s2.0-85031812268